Invention Grant
- Patent Title: Method of forming a high electron mobility transistor hemt, utilizing self-aligned miniature field mitigating plate and protective dielectric layer
- Patent Title (中): 形成高电子迁移率晶体管的方法，利用自对准微型场缓和板和保护电介质层
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Application No.: US12659910Application Date: 2010-03-25
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Publication No.: US07897446B2Publication Date: 2011-03-01
- Inventor: Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
- Applicant: Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
- Applicant Address: US CA Los Angeles
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US CA Los Angeles
- Agency: Posz Law Group, PLC
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.
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