Invention Grant
- Patent Title: Methods of forming recessed access devices associated with semiconductor constructions
-
Application No.: US12051620Application Date: 2008-03-19
-
Publication No.: US07897460B2Publication Date: 2011-03-01
- Inventor: Kunal R. Parekh , Suraj Mathew , Jigish D. Trivedi , John K. Zahurak , Sanh D. Tang
- Applicant: Kunal R. Parekh , Suraj Mathew , Jigish D. Trivedi , John K. Zahurak , Sanh D. Tang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
The invention includes methods of forming recessed access devices. A substrate is provided to have recessed access device trenches therein. A pair of the recessed access device trenches are adjacent one another. Electrically conductive material is formed within the recessed access device trenches, and source/drain regions are formed proximate the electrically conductive material. The electrically conductive material and source/drain regions together are incorporated into a pair of adjacent recessed access devices. After the recessed access device trenches are formed within the substrate, an isolation region trench is formed between the adjacent recessed access devices and filled with electrically insulative material to form a trenched isolation region.
Public/Granted literature
- US20080166856A1 Methods of Forming Recessed Access Devices Associated With Semiconductor Constructions Public/Granted day:2008-07-10
Information query
IPC分类: