Disclosed is a semiconductor device having an n-type drain region, a low concentration p-type body region formed on the n-type drain region, an n-type source region formed on the low concentration p-type body region, a high concentration p-type body region formed on the low concentration p-type body region, a gate insulating film, and a gate electrode, wherein a plurality of trenches T which extend in a same direction and each of which forms a continuous concavo-convex shape when viewed from above are formed from top faces of the source region and the high concentration body region and pass through the low concentration body region to reach into the drain region, and wherein the gate electrode is buried in each of the plurality of trenches. A maximum distance between two adjacent trenches T of the n-type source region is greater than a maximum distance between the two adjacent trenches T of the high concentration p-type body region.