Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12453228Application Date: 2009-05-04
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Publication No.: US07897464B2Publication Date: 2011-03-01
- Inventor: Junji Umezaki
- Applicant: Junji Umezaki
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2008-122282 20080508
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A method of manufacturing a semiconductor device including a buried insulating film formed in a bottom part of a trench and a buried-type gate electrode formed in the trench, the method including selectively forming an insulating film in the bottom part of the trench, forming a resist having an opening in a part that corresponds to a region where a device isolation insulating film is formed on a surface of a semiconductor substrate after forming the insulating film, and oxidizing the surface of the semiconductor substrate in the opening to form the device isolation insulating film.
Public/Granted literature
- US20090280610A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-11-12
Information query
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