Semiconductor integrated circuit device and manufacturing method thereof

Invention Grant

US07897467B2 Semiconductor integrated circuit device and manufacturing method thereof 有权

Title translation: 半导体集成电路器件及其制造方法

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Patent Title: Semiconductor integrated circuit device and manufacturing method thereof
Patent Title (中): 半导体集成电路器件及其制造方法
Application No.: US12784876

Application Date: 2010-05-21
Publication No.: US07897467B2

Publication Date: 2011-03-01
Inventor: Satoshi Sakai , Atsushi Hiraiwa , Satoshi Yamamoto
Applicant: Satoshi Sakai , Atsushi Hiraiwa , Satoshi Yamamoto
Applicant Address: JP Kawasaki-shi
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Kawasaki-shi
Agency: Miles & Stockbridge P.C.
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L21/336

Semiconductor integrated circuit device and manufacturing method thereof

Abstract:

After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

Abstract(Chinese):

在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9）在半导体衬底（1）上形成高介电常数绝缘膜（10）。因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数在半导体衬底（1）上形成恒定绝缘膜（10）。

Public/Granted literature

US20100227446A1 Semiconductor Integrated Circuit Device and Manufacturing Method Thereof Public/Granted day:2010-09-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺