Invention Grant
- Patent Title: Method of manufacturing a dual contact trench capacitor
- Patent Title (中): 制造双接触沟槽电容器的方法
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Application No.: US12181335Application Date: 2008-07-29
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Publication No.: US07897473B2Publication Date: 2011-03-01
- Inventor: Timothy W. Kemerer , Jenifer E. Lary , James S. Nakos , Steven M. Shank
- Applicant: Timothy W. Kemerer , Jenifer E. Lary , James S. Nakos , Steven M. Shank
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of manufacturing a dual contact trench capacitor is provided. The method includes forming a first plate provided within a trench and isolated from a wafer body by a first insulator layer formed in the trench. The method further includes forming a second plate provided within the trench and isolated from the wafer body and the first plate by a second insulator layer formed in the trench.
Public/Granted literature
- US20100029055A1 METHOD OF MANUFACTURING A DUAL CONTACT TRENCH CAPACITOR. Public/Granted day:2010-02-04
Information query
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