Invention Grant
- Patent Title: Preparation of high quality strained-semiconductor directly-on-insulator substrates
- Patent Title (中): 制备高品质应变半导体绝缘体上基板
-
Application No.: US11738837Application Date: 2007-04-23
-
Publication No.: US07897480B2Publication Date: 2011-03-01
- Inventor: Jack O. Chu , Alexander Reznicek , Philip A. Saunders , Leathen Shi
- Applicant: Jack O. Chu , Alexander Reznicek , Philip A. Saunders , Leathen Shi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
A method for achieving a substantially defect free SGOI substrate which includes a SiGe layer that has a high Ge content of greater than about 25 atomic % using a low temperature wafer bonding technique is described. Similarly, a method for forming thin to ultra-thin strain Si, SiC, or SiC/Si layers directly on insulator substrates having a strain content in the range of about 1-5% is further described.
Public/Granted literature
- US20080261055A1 PREPARATION OF HIGH QUALITY STRAINED-SEMICONDUCTOR DIRECTLY-ON-INSULATOR SUBSTRATES Public/Granted day:2008-10-23
Information query
IPC分类:
