Invention Grant
- Patent Title: Formation of single crystal semiconductor nanowires
- Patent Title (中): 形成单晶半导体纳米线
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Application No.: US12490189Application Date: 2009-06-23
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Publication No.: US07897494B2Publication Date: 2011-03-01
- Inventor: Philippe M. Vereecken
- Applicant: Philippe M. Vereecken
- Applicant Address: BG Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BG Leuven
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A method is provided for growing mono-crystalline nanostructures onto a substrate. The method comprises at least the steps of first providing a pattern onto a main surface of the substrate wherein said pattern has openings extending to the surface of the substrate, providing a metal into the openings of the pattern on the exposed main surface, at least partly filling the opening with amorphous material, and then annealing the substrate at temperatures between 300° C. and 1000° C. thereby transforming the amorphous material into a mono-crystalline material by metal mediated crystallization to form the mono-crystalline nanostructure.
Public/Granted literature
- US20100075486A1 FORMATION OF SINGLE CRYSTAL SEMICONDUCTOR NANOWIRES Public/Granted day:2010-03-25
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