Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11747444Application Date: 2007-05-11
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Publication No.: US07897504B2Publication Date: 2011-03-01
- Inventor: Jung Geun Kim , Cheol Mo Jeong , Whee Won Cho , Seong Hwan Myung
- Applicant: Jung Geun Kim , Cheol Mo Jeong , Whee Won Cho , Seong Hwan Myung
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2006-0096199 20060929
- Main IPC: H01L21/4763
- IPC: H01L21/4763

Abstract:
A method for fabricating a semiconductor device, in which a lifting phenomenon can be prevented from occurring in forming an amorphous carbon film on an etched layer having tensile stress. According to the invention, since a compression stress on the etched layer or the amorphous carbon film can be reduced or a compression stress film is formed between the etched layer or the amorphous carbon film to prevent a lifting phenomenon from occurring and thus another pattern can be formed to fabricate a highly integrated semiconductor device.
Public/Granted literature
- US20080081465A1 Method for Fabricating Semiconductor Device Public/Granted day:2008-04-03
Information query
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