Invention Grant
US07897517B2 Method of selectively depositing materials on a substrate using a supercritical fluid
有权
使用超临界流体在衬底上选择性地沉积材料的方法
- Patent Title: Method of selectively depositing materials on a substrate using a supercritical fluid
- Patent Title (中): 使用超临界流体在衬底上选择性地沉积材料的方法
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Application No.: US12533543Application Date: 2009-07-31
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Publication No.: US07897517B2Publication Date: 2011-03-01
- Inventor: Chien M. Wai , Hiroyuki Ohde , Steve Kramer
- Applicant: Chien M. Wai , Hiroyuki Ohde , Steve Kramer
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. Johns P.S.
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.
Public/Granted literature
- US20090291556A1 METHOD OF SELECTIVELY DEPOSITING MATERIALS ON A SUBSTRATE USING A SUPERCRITICAL FLUID Public/Granted day:2009-11-26
Information query
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