Invention Grant
- Patent Title: Manufacturing method for semiconductor device and manufacturing apparatus for semiconductor device
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Application No.: US12490753Application Date: 2009-06-24
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Publication No.: US07897524B2Publication Date: 2011-03-01
- Inventor: Masaki Kamimura , Kenichi Yoshino
- Applicant: Masaki Kamimura , Kenichi Yoshino
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-164692 20080624
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A manufacturing method for a semiconductor device including: determining pattern dependency of a radiation factor of an element forming surface of one wafer having a predetermined pattern formed on the wafer; determining a heating surface of the wafer, based on the pattern dependency of the radiation factor; holding the one wafer having the determined heating surface and another wafer having a determined heating surface, spaced at a predetermined distance in such a manner that non-heating surfaces of the one wafer and the another wafer oppose to each other; and heating the each heating surface of the one wafer and the another wafer.
Public/Granted literature
- US20090325324A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE Public/Granted day:2009-12-31
Information query
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