Invention Grant
- Patent Title: Method for manufacturing flat substrates
- Patent Title (中): 平面基板的制造方法
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Application No.: US12372813Application Date: 2009-02-18
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Publication No.: US07897966B2Publication Date: 2011-03-01
- Inventor: Hai Tran Quoc , Jerome Villette
- Applicant: Hai Tran Quoc , Jerome Villette
- Applicant Address: CH Trubbach
- Assignee: Oerlikon Solar AG, Trubbach
- Current Assignee: Oerlikon Solar AG, Trubbach
- Current Assignee Address: CH Trubbach
- Agency: Pearne & Gordon LLP
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer (19) deposited on a large-surface substrate, (15) before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer (13).
Public/Granted literature
- US20090155494A1 METHOD FOR MANUFACTURING FLAT SUBSTRATES Public/Granted day:2009-06-18
Information query
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