Invention Grant
- Patent Title: Light emitting device and manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US10454124Application Date: 2003-06-04
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Publication No.: US07897979B2Publication Date: 2011-03-01
- Inventor: Shunpei Yamazaki , Takeshi Noda , Yoshinari Higaki
- Applicant: Shunpei Yamazaki , Takeshi Noda , Yoshinari Higaki
- Applicant Address: JP
- Assignee: Semiconductor Energy laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2002-167758 20020607
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
A light emission device manufactured by a method of forming a curved surface having a radius of curvature to the upper end of an insulator 19, exposing a portion of the first electrode 18c to form an inclined surface in accordance with the curved surface, and applying etching so as to expose the first electrode 18b in a region to form a light emission region, in which emitted light from the layer containing the organic compound 20 is reflected on the inclined surface of the first electrode 18c to increase the total take-out amount of light in the direction of an arrow shown in FIG. 1A and, further, forming a light absorbing multi-layered film 24 comprising light absorbing multi-layered film on the first electrode 18c other than the region to form the light emission region, thereby obtaining a light emission device of a structure increasing the amount of light emission taken out in one direction in a light emission element, while not all the light formed in the layer containing the organic compound are taken out from the cathode as a transparent electrode toward TFT but the light was emitted also, for example, in the lateral direction (direction parallel with the plane of the substrate).
Public/Granted literature
- US20030227021A1 Light emitting device and manufacturing method thereof Public/Granted day:2003-12-11
Information query
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