Invention Grant
US07897994B2 Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrate
有权
制造具有DSB衬底的多栅极MOSFET的（100）NMOS和（110）PMOS侧壁表面的方法
- Patent Title: Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrate
- Patent Title (中): 制造具有DSB衬底的多栅极MOSFET的（100）NMOS和（110）PMOS侧壁表面的方法
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Application No.: US11764442Application Date: 2007-06-18
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Publication No.: US07897994B2Publication Date: 2011-03-01
- Inventor: Weize Xiong , Cloves Rinn Cleavelin , Angelo Pinto , Rick L. Wise
- Applicant: Weize Xiong , Cloves Rinn Cleavelin , Angelo Pinto , Rick L. Wise
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A method of forming an integrated circuit device that includes a plurality of MuGFETs is disclosed. A PMOS fin of a MuGFET is formed on a substrate. The PMOS fin includes a channel of a first surface of a first crystal orientation. A NMOS fin of another MuGFET is formed on the substrate. The NMOS fin includes a channel on the substrate at one of 0° and 90° to the PMOS fin and includes a second surface of a second crystal orientation.
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