Invention Grant
US07897997B2 Trench IGBT with trench gates underneath contact areas of protection diodes
有权
沟槽IGBT在保护二极管的接触区域下方具有沟槽栅极
- Patent Title: Trench IGBT with trench gates underneath contact areas of protection diodes
- Patent Title (中): 沟槽IGBT在保护二极管的接触区域下方具有沟槽栅极
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Application No.: US12385639Application Date: 2009-04-15
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Publication No.: US07897997B2Publication Date: 2011-03-01
- Inventor: Fu-Yuan Hsieh
- Applicant: Fu-Yuan Hsieh
- Applicant Address: TW Kaohsiung
- Assignee: Force Mos Technology Co., Ltd.
- Current Assignee: Force Mos Technology Co., Ltd.
- Current Assignee Address: TW Kaohsiung
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/739
- IPC: H01L29/739
Abstract:
A trench PT IGBT (or NPT IGBT) having clamp diodes for ESD protection and prevention of shortage among gate, emitter and collector. The clamp diodes comprise multiple back-to-back Zener Diode composed of doped regions in a polysilicon layer doped with dopant ions of a first conductivity type next to a second conductivity type disposed on an insulation layer above said semiconductor power device. Trench gates are formed underneath the contact areas of the clamp diodes as the buffer layer for prevention of shortage.
Public/Granted literature
- US20090212321A1 Trench IGBT with trench gates underneath contact areas of protection diodes Public/Granted day:2009-08-27
Information query
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