Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US11987854Application Date: 2007-12-05
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Publication No.: US07897999B2Publication Date: 2011-03-01
- Inventor: Hiroshi Furuta
- Applicant: Hiroshi Furuta
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2006-331618 20061208
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
A semiconductor integrated circuit device includes a power supply line connected to a power supply terminal, a ground line connected to a ground terminal and a plurality of capacitors connected in parallel between the power supply line and the ground line. The plurality of capacitors include a first capacitor arranged at a first distance from one of the terminals and a second capacitor arranged at a second distance which is larger than the first distance from the one of the terminals, and the first capacitor has a larger area than the second capacitor.
Public/Granted literature
- US20080135978A1 Semiconductor integrated circuit device Public/Granted day:2008-06-12
Information query
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