Invention Grant
- Patent Title: Single photon detector and associated methods for making the same
- Patent Title (中): 单光子探测器及相关方法制作相同
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Application No.: US12327240Application Date: 2008-12-03
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Publication No.: US07898001B2Publication Date: 2011-03-01
- Inventor: Justin Richardson , Lindsay Grant , Marek Gersbach , Edoardo Charbon , Cristiano Niclass , Robert Henderson
- Applicant: Justin Richardson , Lindsay Grant , Marek Gersbach , Edoardo Charbon , Cristiano Niclass , Robert Henderson
- Applicant Address: GB Marlow-Buckinghamshire GB Edinburgh CH
- Assignee: STMicroelectronics (Research & Development) Limited,The University Court of the University of Edinburgh,Ecole Polytechnique Federale De Lausanne
- Current Assignee: STMicroelectronics (Research & Development) Limited,The University Court of the University of Edinburgh,Ecole Polytechnique Federale De Lausanne
- Current Assignee Address: GB Marlow-Buckinghamshire GB Edinburgh CH
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Agent Lisa K. Jorgenson
- Main IPC: H01L31/0328
- IPC: H01L31/0328
Abstract:
A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.
Public/Granted literature
- US20100133636A1 SINGLE PHOTON DETECTOR AND ASSOCIATED METHODS FOR MAKING THE SAME Public/Granted day:2010-06-03
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