Invention Grant
- Patent Title: Semiconductor device and a method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US11672487Application Date: 2007-02-07
-
Publication No.: US07898032B2Publication Date: 2011-03-01
- Inventor: Takaya Suzuki , Takashi Ipposhi
- Applicant: Takaya Suzuki , Takashi Ipposhi
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2006-081202 20060323
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
The present invention realizes the miniaturization of a semiconductor device. On a first insulation film, an island-like semiconductor layer and a second insulation film which surrounds the semiconductor layer are formed, and resistance elements (for example, poly-silicon resistance elements) which are formed of a conductive film are arranged to be overlapped to an upper surface of the semiconductor layer in plane.
Public/Granted literature
- US20070221995A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2007-09-27
Information query
IPC分类:
