Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11922197Application Date: 2006-06-16
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Publication No.: US07898033B2Publication Date: 2011-03-01
- Inventor: Tadahiro Ohmi , Akinobu Teramoto
- Applicant: Tadahiro Ohmi , Akinobu Teramoto
- Applicant Address: JP Miyagi JP Ibaraki
- Assignee: Tohoku University,Foundation for Advancement of International Science
- Current Assignee: Tohoku University,Foundation for Advancement of International Science
- Current Assignee Address: JP Miyagi JP Ibaraki
- Agency: Foley & Lardner LLP
- Priority: JP2005-177613 20050617; JP2005-349857 20051202
- International Application: PCT/JP2006/312098 WO 20060616
- International Announcement: WO2006/135039 WO 20061221
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
A semiconductor device according to this invention is provided with a MOS transistor of at least one type, wherein the MOS transistor has a semiconductor layer (SOI layer) provided on an SOI substrate and a gate electrode provided on the SOI layer and is normally off by setting the thickness of the SOI layer so that the thickness of a depletion layer caused by a work function difference between the gate electrode and the SOI layer becomes greater than that of the SOI layer.
Public/Granted literature
- US20090321832A1 Semiconductor Device Public/Granted day:2009-12-31
Information query
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