Invention Grant
- Patent Title: Block contact architectures for nanoscale channel transistors
- Patent Title (中): 用于纳米尺度通道晶体管的块式接触结构
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Application No.: US11855823Application Date: 2007-09-14
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Publication No.: US07898041B2Publication Date: 2011-03-01
- Inventor: Marko Radosavljevic , Amlan Majumdar , Brian S. Doyle , Jack Kavalieros , Mark L. Doczy , Justin K. Brask , Uday Shah , Suman Datta , Robert S. Chau
- Applicant: Marko Radosavljevic , Amlan Majumdar , Brian S. Doyle , Jack Kavalieros , Mark L. Doczy , Justin K. Brask , Uday Shah , Suman Datta , Robert S. Chau
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L27/01
- IPC: H01L27/01
Abstract:
A contact architecture for nanoscale channel devices having contact structures coupling to and extending between source or drain regions of a device having a plurality of parallel semiconductor bodies. The contact structures being able to contact parallel semiconductor bodies having sub-lithographic pitch.
Public/Granted literature
- US20080258207A1 Block Contact Architectures for Nanoscale Channel Transistors Public/Granted day:2008-10-23
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