Invention Grant
- Patent Title: Image sensor and method for manufacturing the sensor
- Patent Title (中): 图像传感器和传感器制造方法
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Application No.: US12131185Application Date: 2008-06-02
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Publication No.: US07898050B2Publication Date: 2011-03-01
- Inventor: Dae-Young Kim
- Applicant: Dae-Young Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2007-0136247 20071224
- Main IPC: H01L29/72
- IPC: H01L29/72

Abstract:
An image sensor and a method for manufacturing the sensor are provided for reducing loss of light reflected from photodiodes, and thus, improving light efficiency. The method of manufacturing an image sensor can include providing a semiconductor substrate having a photodiode; and then forming a reflective film frame on the photodiode, the reflective film frame having sidewalls that are inclined with respect to the uppermost surface of the photodiode; and then forming an opening over the surface of the reflective film frame and corresponding to the photodiode by forming a reflective film on the sidewalls of the reflective film frame.
Public/Granted literature
- US20090160000A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SENSOR Public/Granted day:2009-06-25
Information query
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