Invention Grant
- Patent Title: Nitrogen rich barrier layers and methods of fabrication thereof
- Patent Title (中): 富氮阻挡层及其制造方法
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Application No.: US11755642Application Date: 2007-05-30
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Publication No.: US07898082B2Publication Date: 2011-03-01
- Inventor: Bum Ki Moon
- Applicant: Bum Ki Moon
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes a material layer and a first barrier layer disposed over the material layer. The first barrier layer includes a nitrogen-rich region formed at a top surface of the first barrier layer. A conductor is disposed over the first barrier layer such that the first barrier layer and the nitrogen-rich region form a barrier layer between the material layer and the conductor.
Public/Granted literature
- US20070222071A1 Nitrogen Rich Barrier Layers and Methods of Fabrication Thereof Public/Granted day:2007-09-27
Information query
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