Invention Grant
US07898317B2 Circuit for generating negative voltage and a semiconductor memory apparatus using the same
失效
用于产生负电压的电路和使用其的半导体存储装置
- Patent Title: Circuit for generating negative voltage and a semiconductor memory apparatus using the same
- Patent Title (中): 用于产生负电压的电路和使用其的半导体存储装置
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Application No.: US12347366Application Date: 2008-12-31
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Publication No.: US07898317B2Publication Date: 2011-03-01
- Inventor: Hong-Sok Choi
- Applicant: Hong-Sok Choi
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Baker & McKenzie LLP
- Priority: KR10-2008-0079625 20080813
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A circuit for generating negative voltage includes a variable period oscillator configured to generate an oscillator signal enabled in response to a detection signal and to determine a period of the oscillator signal in response to a control signal, a pump configured to perform pumping operations in response to the oscillator signal and to generate a negative voltage by the pumping operations, a negative voltage detecting unit configured to detect the level of the negative voltage to generate the detection signal, and a gate-induced drain leakage current detecting unit configured to measure the amount of a gate-induced drain leakage current to generate the control signal.
Public/Granted literature
- US20100039166A1 CIRCUIT FOR GENERATING NEGATIVE VOLTAGE AND A SEMICONDUCTOR MEMORY APPARATUS USING THE SAME Public/Granted day:2010-02-18
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