Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US12560828Application Date: 2009-09-16
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Publication No.: US07898332B2Publication Date: 2011-03-01
- Inventor: Jun Deguchi , Daisuke Miyashita
- Applicant: Jun Deguchi , Daisuke Miyashita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-285858 20081106
- Main IPC: H03F3/45
- IPC: H03F3/45

Abstract:
A semiconductor integrated circuit device includes: an amplifier circuit which respectively has one or more input terminals and one or more output terminals; a replica circuit which has the same DC characteristics as those of the amplifier circuit; a reference voltage generation circuit which is connected to a bias terminal of the replica circuit, and which generates a predetermined reference voltage at the bias terminal; and a feedback circuit which takes a difference between the reference voltage generated at the bias terminal of the replica circuit and the voltage generated at a bias terminal of the amplifier circuit, and which performs feedback control by providing negative feedback of the difference to the bias terminal of the amplifier circuit so that the voltage generated at the bias terminal of the amplifier circuit is made equal to the reference voltage generated at the bias terminal of the replica circuit.
Public/Granted literature
- US20100109781A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2010-05-06
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