Invention Grant
US07898338B2 High power integrated RF amplifier 有权
大功率集成射频放大器

  • Patent Title: High power integrated RF amplifier
  • Patent Title (中): 大功率集成射频放大器
  • Application No.: US12298735
    Application Date: 2007-04-24
  • Publication No.: US07898338B2
    Publication Date: 2011-03-01
  • Inventor: Igor Blednov
  • Applicant: Igor Blednov
  • Applicant Address: NL Eindhoven
  • Assignee: NXP B.V.
  • Current Assignee: NXP B.V.
  • Current Assignee Address: NL Eindhoven
  • Priority: EP06113148 20060426
  • International Application: PCT/IB2007/051492 WO 20070424
  • International Announcement: WO2007/122586 WO 20071101
  • Main IPC: H03F3/68
  • IPC: H03F3/68
High power integrated RF amplifier
Abstract:
An integrated HF-amplifier has an input bond pad, cells displaced in a first direction, and an output bond pad. Each has a amplifier with input pad, active area, and output pad. The active area is arranged in-between the input and output pads, and the input pad, active area, and output pad are respectively displaced in a second direction substantially perpendicular to the first direction. A first network interconnects input pads of adjacent cells, and extends in the first direction. A second network interconnects output pads of adjacent cells, and extends in the first direction. The first and second networks obtain an output signal at the output bond pad having for all interconnected cells an equal phase shift and amplitude for a same input signal at the input bond pad. At particular bias and phase shift conditions this provides a Doherty amplifier with improved efficiency at power back off.
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