Invention Grant
US07898606B2 Thin film transistor substrate capable of enhancing image clarity and reducing residual images
有权
薄膜晶体管基板能够增强图像清晰度并减少残留图像
- Patent Title: Thin film transistor substrate capable of enhancing image clarity and reducing residual images
- Patent Title (中): 薄膜晶体管基板能够增强图像清晰度并减少残留图像
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Application No.: US12643979Application Date: 2009-12-21
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Publication No.: US07898606B2Publication Date: 2011-03-01
- Inventor: Seung Hoo Yoo , Sung Min Kang , Hee Wook Do , Hoon Kim , Hyun Cheol Moon , Hye Ran You
- Applicant: Seung Hoo Yoo , Sung Min Kang , Hee Wook Do , Hoon Kim , Hyun Cheol Moon , Hye Ran You
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2007-0000782 20070103
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; G02F1/136 ; G02F1/1337

Abstract:
A thin film transistor substrate and a liquid crystal display capable of eliminating residual images and enhancing clarity are presented. The thin film transistor substrate includes a charge-up capacitor for increasing electric charge in a first pixel electrode of a first pixel capacitor and a charge-down capacitor decreasing electric charge in a second pixel electrode of a second pixel capacitor. An extension electrode portion of the charge-up capacitor is formed in the shape of a frame to reduce any variation in the overlapping area between the first pixel electrode and the extension electrode portion caused by an alignment error generated during the manufacturing process.
Public/Granted literature
- US20100097537A1 THIN FILM TRANSISTOR SUBSTRATE CAPABLE OF ENHANCING IMAGE CLARITY AND REDUCING RESIDUAL IMAGES Public/Granted day:2010-04-22
Information query
IPC分类: