Invention Grant
- Patent Title: Magnetoresistive effect element with resistance adjustment layer of semimetal, magnetic head and magnetic reproducing apparatus
- Patent Title (中): 具有半金属，磁头和磁性再现装置的电阻调节层的磁阻效应元件
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Application No.: US11980678Application Date: 2007-10-31
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Publication No.: US07898774B2Publication Date: 2011-03-01
- Inventor: Hiromi Yuasa , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Masashi Sahashi
- Applicant: Hiromi Yuasa , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Masashi Sahashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2001-190511 20010622
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.
Public/Granted literature
- US20080068765A1 Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus Public/Granted day:2008-03-20
Information query
IPC分类:
