Invention Grant
US07898775B2 Magnetoresistive device having bias magnetic field applying layer that includes two magnetic layers antiferromagnetically coupled to each other through intermediate layer 有权
具有偏磁场施加层的磁阻器件包括通过中间层彼此反铁磁耦合的两个磁性层

Magnetoresistive device having bias magnetic field applying layer that includes two magnetic layers antiferromagnetically coupled to each other through intermediate layer
Abstract:
An MR element includes a free layer whose direction of magnetization changes in response to an external magnetic field. Two bias magnetic field applying layers are disposed adjacent to two side surfaces of the MR element. Each bias magnetic field applying layer includes a nonmagnetic intermediate layer, and a first magnetic layer and a second magnetic layer disposed to sandwich the intermediate layer. The first and second magnetic layers are antiferromagnetically exchange-coupled to each other through RKKY interaction.
Information query
Patent Agency Ranking
0/0