Invention Grant
- Patent Title: Masked memory cells
- Patent Title (中): 屏蔽记忆体
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Application No.: US12106927Application Date: 2008-04-21
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Publication No.: US07898836B2Publication Date: 2011-03-01
- Inventor: Thomas Kuenemund , Karl Zapf , Artur Wroblewski
- Applicant: Thomas Kuenemund , Karl Zapf , Artur Wroblewski
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dickstein Shapiro LLP
- Main IPC: G11C17/00
- IPC: G11C17/00

Abstract:
An array of masked memory cells including a first memory cell in a first column and a second memory cell in a second different column, wherein the first memory cell is capable of being accessed, so as to output, dependent on a first binary mask signal, a first binary value at a first output and a second binary value at a second output or vice versa, wherein the second memory cell is capable of being accessed, so as to output, dependent on a second binary mask signal, a first binary value at a third output and a second binary value at a fourth output or vice versa, and wherein the second and the third outputs of the memory cells are connected to an identical bit line of the memory array.
Public/Granted literature
- US20090323389A1 MASKED MEMORY CELLS Public/Granted day:2009-12-31
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