Invention Grant
US07898839B2 Semiconductor memory device and method of writing into semiconductor memory device
有权
半导体存储器件和写入半导体存储器件的方法
- Patent Title: Semiconductor memory device and method of writing into semiconductor memory device
- Patent Title (中): 半导体存储器件和写入半导体存储器件的方法
-
Application No.: US12398342Application Date: 2009-03-05
-
Publication No.: US07898839B2Publication Date: 2011-03-01
- Inventor: Masaki Aoki
- Applicant: Masaki Aoki
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
In the semiconductor memory device having a resistance memory element, a first transistor having a drain terminal connected to one end of the resistance memory element and a source terminal connected to a ground voltage, and a second transistor having source terminal connected to the resistance memory element, when a write voltage is applied to the resistance memory element via the second transistor to switch the resistance memory element from a low resistance state to a high resistance state, a voltage is controlled to be a value which is not less than a reset voltage and less than a set voltage by applying to a gate terminal of the second transistor a voltage which is not less than a total of the reset voltage and a threshold voltage of the second transistor and is less than a total of the set voltage and the threshold voltage.
Public/Granted literature
- US20090168495A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WRITING INTO SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-07-02
Information query
