Invention Grant
- Patent Title: Magnetoresistive element
- Patent Title (中): 磁阻元件
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Application No.: US12470786Application Date: 2009-05-22
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Publication No.: US07898846B2Publication Date: 2011-03-01
- Inventor: Makoto Nagamine , Toshihiko Nagase , Sumio Ikegawa , Katsuya Nishiyama , Masatoshi Yoshikawa
- Applicant: Makoto Nagamine , Toshihiko Nagase , Sumio Ikegawa , Katsuya Nishiyama , Masatoshi Yoshikawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-183718 20050623
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.
Public/Granted literature
- US20090225587A1 MAGNETORESISTIVE ELEMENT Public/Granted day:2009-09-10
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