Invention Grant
- Patent Title: Compound cell spin-torque magnetic random access memory
- Patent Title (中): 复合细胞自旋转矩磁随机存取存储器
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Application No.: US11950925Application Date: 2007-12-05
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Publication No.: US07898849B2Publication Date: 2011-03-01
- Inventor: Thomas William Clinton , Werner Scholz
- Applicant: Thomas William Clinton , Werner Scholz
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology, LLC
- Current Assignee: Seagate Technology, LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Campbell Nelson Whipps LLC
- Main IPC: G11C11/15
- IPC: G11C11/15
Abstract:
A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals.
Public/Granted literature
- US20090147562A1 COMPOUND CELL SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2009-06-11
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