Invention Grant
US07898863B2 Method, apparatus, and system for improved read operation in memory
有权
用于改善存储器中的读取操作的方法，装置和系统
- Patent Title: Method, apparatus, and system for improved read operation in memory
- Patent Title (中): 用于改善存储器中的读取操作的方法，装置和系统
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Application No.: US11832513Application Date: 2007-08-01
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Publication No.: US07898863B2Publication Date: 2011-03-01
- Inventor: Seiichi Aritome
- Applicant: Seiichi Aritome
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Various embodiments include methods, apparatus, and systems for reading an adjacent cell of a memory array in an electronic device to determine a threshold voltage value of the adjacent cell, the adjacent cell being adjacent a target cell, and reading the target cell of the memory array using a wordline voltage value based on the threshold voltage value of the adjacent cell. Additional apparatus, systems, and methods are described.
Public/Granted literature
- US20090034337A1 METHOD, APPARATUS, AND SYSTEM FOR IMPROVED READ OPERATION IN MEMORY Public/Granted day:2009-02-05
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