Invention Grant
US07898870B2 Nonvolatile memory device having a bit line select voltage generator adapted to a temperature change
有权
具有适于温度变化的位线选择电压发生器的非易失性存储器件
- Patent Title: Nonvolatile memory device having a bit line select voltage generator adapted to a temperature change
- Patent Title (中): 具有适于温度变化的位线选择电压发生器的非易失性存储器件
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Application No.: US12790579Application Date: 2010-05-28
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Publication No.: US07898870B2Publication Date: 2011-03-01
- Inventor: Jin-Haeng Lee
- Applicant: Jin-Haeng Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2007-0015352 20070214
- Main IPC: G11C16/26
- IPC: G11C16/26
Abstract:
A bit line select voltage generator includes a first and second voltage generators and a voltage transmission unit. The first voltage generator operates to divide a reference voltage of a reference voltage generator to generate a first voltage and a second voltage, wherein the second voltage is lower than the first voltage. The second voltage generator operates to change the first voltage according to change of temperatures thereby generating a third voltage. The voltage transmission unit operates to transmit the second voltage or the third voltage to an output terminal according to a voltage level of a first voltage transmit control signal or a second voltage transmit control signal.
Public/Granted literature
- US20100238737A1 BIT LINE SELECT VOLTAGE GENERATOR AND NONVOLATILE MEMORY DEVICE USING THE SAME Public/Granted day:2010-09-23
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