Invention Grant
- Patent Title: Semiconductor memory device and data sensing method thereof
- Patent Title (中): 半导体存储器件及其数据感测方法
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Application No.: US12219494Application Date: 2008-07-23
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Publication No.: US07898881B2Publication Date: 2011-03-01
- Inventor: Jung-Hwa Choi , Byung-Sik Moon
- Applicant: Jung-Hwa Choi , Byung-Sik Moon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2007-0073599 20070723
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor memory device includes first and second edge drivers configured to generate sensing control signals, a memory cell array between first and second edge drivers, and pluralities of unit sense amplifiers detecting data from the memory cell array in response to the sensing control signals.
Public/Granted literature
- US20090027979A1 Semiconductor memory device and data sensing method thereof Public/Granted day:2009-01-29
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