Invention Grant
- Patent Title: Sense amplifiers and semiconductor devices including the same
- Patent Title (中): 感应放大器和包括相同的半导体器件
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Application No.: US12068983Application Date: 2008-02-14
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Publication No.: US07898886B2Publication Date: 2011-03-01
- Inventor: Whee-jin Kwon , Jung-hwa Lee
- Applicant: Whee-jin Kwon , Jung-hwa Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2007-0015227 20070214
- Main IPC: G11C7/02
- IPC: G11C7/02

Abstract:
A sense amplifier includes a first transistor having a gate electrode electrically connected to a bit line and a first electrode electrically connected to a complementary bit line. A second transistor has a gate electrode electrically connected to the complementary bit line and a first electrode electrically connected to the bit line. An equalizing transistor is disposed between the gate electrode of the first transistor and the gate electrode of the second transistor. The first electrode of the first transistor and a first electrode of the equalizing transistor are electrically connected to each other, and the first electrode of the second transistor and a second electrode of the equalizing transistor are electrically connected to each other.
Public/Granted literature
- US20080192535A1 Sense amplifiers and semiconductor devices including the same Public/Granted day:2008-08-14
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