Invention Grant
US07899103B2 Side light emitting type semiconductor laser diode having dielectric layer formed on active layer
失效
具有形成在有源层上的电介质层的侧面发光型半导体激光二极管
- Patent Title: Side light emitting type semiconductor laser diode having dielectric layer formed on active layer
- Patent Title (中): 具有形成在有源层上的电介质层的侧面发光型半导体激光二极管
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Application No.: US11545546Application Date: 2006-10-11
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Publication No.: US07899103B2Publication Date: 2011-03-01
- Inventor: Han-youl Ryu , Kyoung-ho Ha
- Applicant: Han-youl Ryu , Kyoung-ho Ha
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung LED Co., Ltd.
- Current Assignee: Samsung LED Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Kile Park Goekjian Reed & McManus PLLC
- Priority: KR10-2005-0096159 20051012
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.
Public/Granted literature
- US20070081570A1 Side light emitting type semiconductor laser diode having dielectric layer formed on active layer Public/Granted day:2007-04-12
Information query
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