Invention Grant
- Patent Title: Beam homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
- Patent Title (中): 光束均化器,激光照射装置和制造半导体器件的方法
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Application No.: US12007623Application Date: 2008-01-14
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Publication No.: US07899282B2Publication Date: 2011-03-01
- Inventor: Koichiro Tanaka
- Applicant: Koichiro Tanaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2003-065682 20030311
- Main IPC: G02B6/26
- IPC: G02B6/26 ; G02B6/00

Abstract:
The present invention provides a beam homogenizer being equipped with an optical waveguide having a pair of reflection planes provided oppositely, having one end surface into which the laser beam is incident, and having the other end surface from which the laser beam is emitted in the optical system for forming the beam spot. The optical waveguide is a circuit being able to keep radiation light in a certain region and to transmit the radiation light in such a way that the energy flow thereof is guided in parallel with an axis of the channel.
Public/Granted literature
- US20100284650A1 Beam homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device Public/Granted day:2010-11-11
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