Invention Grant
- Patent Title: Flash memory storage system
- Patent Title (中): 闪存存储系统
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Application No.: US12617765Application Date: 2009-11-13
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Publication No.: US07899981B2Publication Date: 2011-03-01
- Inventor: Takashige Iwamura , Kazuhisa Fujimoto , Yoshiaki Eguchi , Shunji Kawamura
- Applicant: Takashige Iwamura , Kazuhisa Fujimoto , Yoshiaki Eguchi , Shunji Kawamura
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Brundidge & Stanger, P.C.
- Priority: JP2006-150912 20060531
- Main IPC: G06F12/00
- IPC: G06F12/00
Abstract:
A flash memory storage system has a plurality of flash memory devices comprising a plurality of flash memories, and a controller having an I/O processing control unit for accessing a flash memory device specified by a designated access destination in an I/O request received from an external device from among the plurality of flash memory devices. A parity group can be configured of flash memory devices having identical internal configuration.
Public/Granted literature
- US20100064097A1 FLASH MEMORY STORAGE SYSTEM Public/Granted day:2010-03-11
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