Invention Grant
- Patent Title: Semiconductor memory device parallel bit test circuits
- Patent Title (中): 半导体存储器件并行位测试电路
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Application No.: US12389607Application Date: 2009-02-20
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Publication No.: US07900101B2Publication Date: 2011-03-01
- Inventor: Dae-Hee Jung
- Applicant: Dae-Hee Jung
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2008-0033475 20080411
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
Parallel bit test circuits for use in a semiconductor memory devices are provided which include a first bus that has N bus lines that are configured to transfer a first group of N bits of test result data and a second bus that has N bus lines that are configured to transfer a second group of N bits of test result data. These parallel bit test circuits further include a switching unit that has a plurality of unit switches, where each switch is configured to connect a bus line of the first bus and a respective bus line of the second bus in response to a switching control signal that is applied after the second group of N bits of test result data are output from the second bus, to transfer the first group of N bits of test result data from the first bus to the second bus so as to output a total of 2N bits of test result data through the second bus.
Public/Granted literature
- US20090259895A1 SEMICONDUCTOR MEMORY DEVICE PARALLEL BIT TEST CIRCUITS Public/Granted day:2009-10-15
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