Invention Grant
- Patent Title: High-speed programming of memory devices
- Patent Title (中): 高速编程存储器件
-
Application No.: US11957970Application Date: 2007-12-17
-
Publication No.: US07900102B2Publication Date: 2011-03-01
- Inventor: Dotan Sokolov , Ofir Shalvi
- Applicant: Dotan Sokolov , Ofir Shalvi
- Applicant Address: IL Herzliya Pituach
- Assignee: Anobit Technologies Ltd.
- Current Assignee: Anobit Technologies Ltd.
- Current Assignee Address: IL Herzliya Pituach
- Agency: Fish & Richardson P.C.
- Main IPC: G11C29/34
- IPC: G11C29/34 ; G11C29/54

Abstract:
A method for operating a memory that includes a plurality of analog memory cells includes storing data in a first group of the memory cells by writing respective first cell values to the memory cells in the first group. After storing the data, respective second cell values are read from the memory cells in the first group, and differences are found between the respective first and second cell values for each of one or more of the memory cells in the first group. The differences are processed to produce error information, and the error information is stored in a second group of the memory cells.
Public/Granted literature
- US20080148115A1 HIGH-SPEED PROGRAMMING OF MEMORY DEVICES Public/Granted day:2008-06-19
Information query
IPC分类: