A semiconductor memory device includes a temporary storage circuit configured to receive data items and store the data items in rows and columns, a detecting code generator configured to generate first detecting codes used to detect errors in the data items, respectively, a first correcting code generator configured to generate first correcting codes used to correct errors in first data blocks corresponding to the columns, respectively, each of the first data blocks containing data items that are arranged in a corresponding one of the columns, and a second correcting code generator configured to generate second correcting codes used to correct errors in second data blocks corresponding to the rows, respectively, each of the second data blocks containing data items that are arranged in a corresponding one of the rows.