Invention Grant
US07900176B2 Transistor layout structures for controlling sizes of transistors without changing active regions, and methods of controlling the same 失效
用于控制晶体管尺寸而不改变有源区的晶体管布局结构及其控制方法

Transistor layout structures for controlling sizes of transistors without changing active regions, and methods of controlling the same
Abstract:
A structure for controlling the size of a transistor may include: an active region; a first gate line on the active region; one or more second gate lines on the active region; and source or drain regions arranged in three or more divided active regions that result from the first gate line and the one or more second gate lines dividing the active region into the divided active regions. A method of controlling the size of a transistor may include: arranging an active region; arranging a first gate line on the active region; arranging one or more second gate lines on the active region; arranging source or drain regions in three or more divided active regions; and controlling the size of the transistor by connecting to each other or separating from each other the source or drain regions using upper wires.
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