Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure.