Invention Grant
- Patent Title: Microfluidic measuring tool to measure through-silicon via depth
- Patent Title (中): 微流量测量工具通过深度测量穿硅
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Application No.: US12482539Application Date: 2009-06-11
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Publication No.: US07900519B2Publication Date: 2011-03-08
- Inventor: Arvind Chandrasekaran
- Applicant: Arvind Chandrasekaran
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Michelle Gallardo; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: G01L9/00
- IPC: G01L9/00

Abstract:
A tool to measure the depth of one or more through-silicon vias, the tool fabricated in silicon to include a microfluidic chamber that is positioned over the one or more through-silicon vias, further including a fluid actuation chamber to inject fluid into the microfluidic chamber and into the one or more through-silicon vias, and a pressure sensing chamber to sense the fluid pressure to indicate when the one or more through-silicon vias are filled with the fluid.
Public/Granted literature
- US20100313652A1 Microfluidic Measuring Tool to Measure Through-Silicon Via Depth Public/Granted day:2010-12-16
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