Invention Grant
US07900519B2 Microfluidic measuring tool to measure through-silicon via depth 有权
微流量测量工具通过深度测量穿硅

  • Patent Title: Microfluidic measuring tool to measure through-silicon via depth
  • Patent Title (中): 微流量测量工具通过深度测量穿硅
  • Application No.: US12482539
    Application Date: 2009-06-11
  • Publication No.: US07900519B2
    Publication Date: 2011-03-08
  • Inventor: Arvind Chandrasekaran
  • Applicant: Arvind Chandrasekaran
  • Applicant Address: US CA San Diego
  • Assignee: QUALCOMM Incorporated
  • Current Assignee: QUALCOMM Incorporated
  • Current Assignee Address: US CA San Diego
  • Agent Michelle Gallardo; Nicholas J. Pauley; Jonathan T. Velasco
  • Main IPC: G01L9/00
  • IPC: G01L9/00
Microfluidic measuring tool to measure through-silicon via depth
Abstract:
A tool to measure the depth of one or more through-silicon vias, the tool fabricated in silicon to include a microfluidic chamber that is positioned over the one or more through-silicon vias, further including a fluid actuation chamber to inject fluid into the microfluidic chamber and into the one or more through-silicon vias, and a pressure sensing chamber to sense the fluid pressure to indicate when the one or more through-silicon vias are filled with the fluid.
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