Invention Grant
- Patent Title: Semiconductor temperature sensor
- Patent Title (中): 半导体温度传感器
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Application No.: US12201835Application Date: 2008-08-29
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Publication No.: US07901134B2Publication Date: 2011-03-08
- Inventor: Toru Sudo
- Applicant: Toru Sudo
- Applicant Address: JP Chiba
- Assignee: Seiko Instruments Inc.
- Current Assignee: Seiko Instruments Inc.
- Current Assignee Address: JP Chiba
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2007-224125 20070830
- Main IPC: G01K7/00
- IPC: G01K7/00

Abstract:
Provided is a semiconductor temperature sensor having satisfactory linearity of an output voltage with respect to temperature. In a semiconductor temperature sensor (1), even if the temperature increases and a leakage current is generated at bases of a PNP (8) and a PNP (9), a current which flows into emitters of a PNP (7) and the PNP (8) is not affected by the leakage current by virtue of a leakage current compensation current of a PNP (14), and thus, the linearity of the output voltage with respect to the temperature is improved and the accuracy of the semiconductor temperature sensor (1) with respect to the temperature is improved.
Public/Granted literature
- US20090059997A1 SEMICONDUCTOR TEMPERATURE SENSOR Public/Granted day:2009-03-05
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