A substrate on which a resist film has been formed is transferred to an aligner and subjected to exposure processing. The substrate is then subjected to post-exposure baking in a second processing system. The substrate is then transferred again to the aligner and subjected to exposure processing. The substrate for which exposure processing for the second time has been finished is transferred to a first processing system and again subjected to post-exposure baking. The time periods from the ends of the exposure processing to the starts of the post-exposure baking for the first time and the second time are controlled to be equal. In pattern forming processing in which exposure processing is performed a plurality of times between the resist film forming processing and the developing treatment, a pattern with a desired dimension can be finally formed.