Invention Grant
- Patent Title: Ionized physical vapor deposition (iPVD) process
-
Application No.: US10811326Application Date: 2004-03-26
-
Publication No.: US07901545B2Publication Date: 2011-03-08
- Inventor: Frank M. Cerio, Jr. , Jacques Faguet , Bruce D. Gittleman , Rodney L. Robison
- Applicant: Frank M. Cerio, Jr. , Jacques Faguet , Bruce D. Gittleman , Rodney L. Robison
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: C23C14/34
- IPC: C23C14/34

Abstract:
An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is operated at low target power and high pressure >50 mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.
Public/Granted literature
- US20050211545A1 Ionized physical vapor deposition (iPVD) process Public/Granted day:2005-09-29
Information query
IPC分类: