Invention Grant
- Patent Title: Method of low temperature imprinting process with high pattern transfer yield
- Patent Title (中): 低温压印方法，具有高图案转印率
-
Application No.: US11355600Application Date: 2006-02-16
-
Publication No.: US07901607B2Publication Date: 2011-03-08
- Inventor: Yongan Xu , Hong Yee Low
- Applicant: Yongan Xu , Hong Yee Low
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Winstead P.C.
- Main IPC: B28B3/00
- IPC: B28B3/00 ; A61M25/00 ; B29C59/00
Abstract:
The present invention is directed to novel methods of imprinting substrate-supported or freestanding structures at low cost, with high pattern transfer yield, and using low processing temperature. Such methods overcome many of the above-described limitations of the prior art. Generally, such methods of the present invention employ a sacrificial layer of film.
Public/Granted literature
- US20060183395A1 Method of low temperature imprinting process with high pattern transfer yield Public/Granted day:2006-08-17
Information query
