Invention Grant
US07901783B2 Low κ dielectric inorganic/organic hybrid films and method of making
有权
低＆kgr 介电无机/有机杂化膜及其制备方法
- Patent Title: Low κ dielectric inorganic/organic hybrid films and method of making
- Patent Title (中): 低＆kgr 介电无机/有机杂化膜及其制备方法
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Application No.: US11606425Application Date: 2006-11-29
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Publication No.: US07901783B2Publication Date: 2011-03-08
- Inventor: Peter Rose , Eugene Lopata , John Felts
- Applicant: Peter Rose , Eugene Lopata , John Felts
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew
- Main IPC: B32B9/04
- IPC: B32B9/04
Abstract:
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.
Public/Granted literature
- US20070092732A1 Low k dielectric inorganic/organic hybrid films and method of making Public/Granted day:2007-04-26
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